What should I know? How is there operation compared to BJTs? I've done some research already, so far from what I can understand; the source and drain are similar to the collector and emitter (not sure which is which, but their unipolar right?), the gate is similar to the Base, except: these FETs are voltage controlled unlike BJTs, and almost little to no current flows through the gate because it is insulated in a way similar to a capacitor which makes them highly susceptible to damage from static. There is enhancement which is normally open, and depletion which is normally closed, then there's P-Channel and N-Channel but doesn't behave exactly the same as NPN and PNP. Also, looking at the settings in EC that you can adjust on the MOSFETs, I'm not familiar with any of that! Am I correct on this so far, what else should I know?
