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faceblast
modified 6 years ago

Coupled Inductor Ohmic Resistance

13
10
357
05:42:41
equivalent ohmic resistance of a coupled inductor. putting varying current through the left side changes the equivalent ohmic resistance on the right side. thus the current through the right side can be controlled by applying varying currents to the left side. I thought that was neat - the two sides are electrically isolated
published 11 years ago
rich11292000
11 years ago
Its like a variable inductor. I was thinking about experimenting with this same rig last night.
rich11292000
11 years ago
The idea for me came from how a super inductor would work. Just like this some what.
faceblast
11 years ago
what the heck is a superinductor
rich11292000
11 years ago
The opposite of a super capacitor
rich11292000
11 years ago
I dont think its real though. A quick search gets no results.
Ashik_hosen
11 years ago
Awesome....
faceblast
11 years ago
this is how transformer coupling between amplifier stages works
UncleRick
11 years ago
If there exists any other voltages in a circuit, other than the source from the ohm meter, the readings will be invalid.
lenzrulz
11 years ago
Nice
lenzrulz
11 years ago
Although the MOSFET is a four-terminal device with source (S), gate (G), drain (D), and body (B) terminals, the body (or substrate) of the MOSFET is often connected to the source terminal, making it a three-terminal device like other field-effect transistors. Because these two terminals are normally connected to each other (short-circuited) internally, only three terminals appear in electrical diagrams. The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. The main advantage of a MOSFET over a regular transistor is that it requires very little current to turn on (less than 1mA), while delivering a much higher current to a load (10 to 50A or more). However, the MOSFET requires a higher gate voltage (3-4V) to turn on. In enhancement mode MOSFETs, a voltage drop across the oxide induces a conducting channel between the source and drain contacts via the field effect. The term "enhancement mode" refers to the increase of conductivity with increase in oxide field that adds carriers to the channel, also referred to as the inversion layer. The channel can contain electrons (called an nMOSFET or nMOS), or holes (called a pMOSFET or pMOS), opposite in type to the substrate, so nMOS is made with a p-type substrate, and pMOS with an n-type substrate (see article on semiconductor devices). In the less common depletion mode MOSFET, detailed later on, the channel consists of carriers in a surface impurity layer of opposite type to the substrate, and conductivity is decreased by application of a field that depletes carriers from this surface layer. this is what happens when we become bored, we post drivel on each other's circuits, faceblast started this trend and I'm continuing it...enjoy!

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