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faceblast
modified 5 years ago

Reactance Calculator

2
5
155
02:04:26
Set up an RLC circuit at the frequency and inductance (or capacitance) you want to calculate (blue). Then tune the LC until it resonates (green); the phase shift with be -90°. Finally, adjust the resistor until the gain is at 0dB (orange). this is the reactance of both the inductor and the capacitor at this frequency. maths
published 10 years ago
ZyanWu
10 years ago
Isn't easier to put the measured element in series with a resistor and then search for the point where the phase = 45°? :D
ZyanWu
10 years ago
By modifying the resistor^
faceblast
10 years ago
oh wow, that's much easier
hurz
10 years ago
But to not have any overshot behavior you need to find the -6dB point or just double R like you found at 0dB.
lenzrulz
10 years ago
Although the MOSFET is a four-terminal device with source (S), gate (G), drain (D), and body (B) terminals, the body (or substrate) of the MOSFET is often connected to the source terminal, making it a three-terminal device like other field-effect transistors. Because these two terminals are normally connected to each other (short-circuited) internally, only three terminals appear in electrical diagrams. The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. The main advantage of a MOSFET over a regular transistor is that it requires very little current to turn on (less than 1mA), while delivering a much higher current to a load (10 to 50A or more). However, the MOSFET requires a higher gate voltage (3-4V) to turn on. In enhancement mode MOSFETs, a voltage drop across the oxide induces a conducting channel between the source and drain contacts via the field effect. The term "enhancement mode" refers to the increase of conductivity with increase in oxide field that adds carriers to the channel, also referred to as the inversion layer. The channel can contain electrons (called an nMOSFET or nMOS), or holes (called a pMOSFET or pMOS), opposite in type to the substrate, so nMOS is made with a p-type substrate, and pMOS with an n-type substrate (see article on semiconductor devices). In the less common depletion mode MOSFET, detailed later on, the channel consists of carriers in a surface impurity layer of opposite type to the substrate, and conductivity is decreased by application of a field that depletes carriers from this surface layer. this is what happens when we become bored, we post drivel on each other's circuits, faceblast started this trend and I'm continuing it...enjoy!

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