Main topology in imagen sensor of integrated circuit CMOS. The pixel sensor consist in a photodiode polarized in inverse form with three transistor. This stage is follow by a correlated double sample that capture the KTC noise of a several source and it is subtracted to the signal sample. The signal sample is proportional to the charge accumulated by the photodiode and in the circuit you can vary this value change the mount of current that stay in parallel to the photodiode. I recommend vary between 1 nA to 40 nA. More than that sature the photodiode and will not appear any changes in the voltage.
Any comment or suggestion, please put it down.
Juanfra
