Simulation of a classic boost converter for 5v to 30V.
NFET used as the low side switch due to low on-resistance and fast switching capability.
The NFET was adjusted to be a power mosfet, with a 1000um width, higher threshold, and higher KP.
A 1 ohm resistor was added to the source to simulate a realistic internal resistance and prevent an ideal short condition from occuring.
PWM signal at VIN+10V is used to switch the NFET on and off at 100kHz. 82.9% duty cycle gives approximately 30V boost. with 50mV ripple.
The 100uH inductor stores energy during the NFET's ON time, then releases during the OFF time. The 100mOhm resistor in series limits the current and simulates the ESR.
The 10uF cap absorbs the pulsed energy from the inductor, storing in the electric field, reducing ripple and providing a steady DC level.
